Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

Y. Tan, B. Johnson, S. Seraphin, J. Jiao, M. J. Anc, L. P. Allen

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The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 kev with doses of 0.5, 0.83 and 1.8 × 1018 cm-2 oxygen followed by annealing treatment at different ramp rates (1 °C min-1 or 5°C min-1), temperatures (1310 °C or 1350 °C), and holding times (0 or 5 h). The results show that a higher annealing temperature (∼ 1350 °C) with a longer holding time improves the quality of the top Si layers and the smoothness of the interfaces in low-dose SIMOX wafers. A slow thermal ramp rate results in sharp interfaces but leads to a high density of Si islands in the buried oxide (BOX) layer. Chemical etching experiment performed on the top Si layer of a low-dose SIMOX shows pipeline structure indicating the inhomogeneous chemical reactivity of the top Si layer.

Original languageEnglish (US)
Pages (from-to)537-542
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number9
StatePublished - Sep 1 2001


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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