Effect of atomic layer deposition on the quality factor of silicon nanobeam cavities

Michael Gehl, Ricky Gibson, Joshua Hendrickson, Andrew Homyk, Antti Säynätjoki, Tapani Alasaarela, Lasse Karvonen, Ari Tervonen, Seppo Honkanen, Sander Zandbergen, Benjamin C. Richards, J. D. Olitzky, Axel Scherer, Galina Khitrova, Hyatt M. Gibbs, Ju YoungKim, Yong Hee Lee

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Abstract

In this work we study the effect of thin-film deposition on the quality factor (Q) of silicon nanobeam cavities. We observe an average increase in the Q of 38 ± 31% in one sample and investigate the dependence of this increase on the initial nanobeam hole sizes. We note that this process can be used to modify cavities that have larger than optimal hole sizes following fabrication. Additionally, the technique allows the tuning of the cavity mode wavelength and the incorporation of new materials, without significantly degrading Q.

Original languageEnglish (US)
Pages (from-to)A55-A59
JournalJournal of the Optical Society of America B: Optical Physics
Volume29
Issue number2
DOIs
StatePublished - Feb 1 2012

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ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Gehl, M., Gibson, R., Hendrickson, J., Homyk, A., Säynätjoki, A., Alasaarela, T., Karvonen, L., Tervonen, A., Honkanen, S., Zandbergen, S., Richards, B. C., Olitzky, J. D., Scherer, A., Khitrova, G., Gibbs, H. M., YoungKim, J., & Lee, Y. H. (2012). Effect of atomic layer deposition on the quality factor of silicon nanobeam cavities. Journal of the Optical Society of America B: Optical Physics, 29(2), A55-A59. https://doi.org/10.1364/JOSAB.29.000A55