Effect of KIO3 on electrochemical mechanical removal of Ta/TaN films

R. Govindarajan, N. Venkataraman, S. Raghavan

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This paper reports results obtained from the polishing of Ta and TaN films at low pressures (∼0.5psi) in solutions containing 2,5 dihydroxy benzene sulfonic acid (DBSA) as a tantalum complexant, potassium iodate (KIO 3) as an oxidant and a small amount of silica particles (∼0.1wt%), under galvanostatic conditions. Variables such as pH, KIO 3 concentration and current density have been investigated to develop an optimized formulation. Solution containing 0.1M DBSA, 0.05M KIO3 and 0.1% silica particles removes tantalum and tantalum nitride at the rates of ∼170Å/min and ∼200Å/min, respectively at 1mA/cm2 current density. Under the same conditions, Ta/Cu selectivity of ∼0.8:1 and TaN/Cu selectivity of ∼0.9:1 were achieved.

Original languageEnglish (US)
Title of host publicationChemical Mechanical Polishing 10
Number of pages8
StatePublished - Dec 1 2009
EventChemical Mechanical Polishing 10 - 215th ECS Meeting - San Francisco, CA, United States
Duration: May 24 2009May 29 2009

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


OtherChemical Mechanical Polishing 10 - 215th ECS Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Engineering(all)


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