Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

Mukund Bapna, Brad Parks, Samuel Oberdick, Hamid Almasi, Congli Sun, Paul Voyles, Weigang Wang, Sara A. Majetich

Research output: Contribution to journalArticle

Abstract

Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.

Original languageEnglish (US)
Pages (from-to)34-41
Number of pages8
JournalJournal of Magnetism and Magnetic Materials
Volume483
DOIs
StatePublished - Aug 1 2019

Fingerprint

Tunnel junctions
Magnetic anisotropy
tunnel junctions
Scanning electron microscopy
anisotropy
Magnetoresistance
Coercive force
Seed
Tunnels
scanning electron microscopy
Transmission electron microscopy
coercivity
tunnels
seeds
Electric potential
transmission electron microscopy
cross sections
electric potential
Hot Temperature

Keywords

  • Magnetic tunnel junction
  • Perpendicular magnetic anisotropy
  • Scanning probe microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy. / Bapna, Mukund; Parks, Brad; Oberdick, Samuel; Almasi, Hamid; Sun, Congli; Voyles, Paul; Wang, Weigang; Majetich, Sara A.

In: Journal of Magnetism and Magnetic Materials, Vol. 483, 01.08.2019, p. 34-41.

Research output: Contribution to journalArticle

Bapna, Mukund ; Parks, Brad ; Oberdick, Samuel ; Almasi, Hamid ; Sun, Congli ; Voyles, Paul ; Wang, Weigang ; Majetich, Sara A. / Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy. In: Journal of Magnetism and Magnetic Materials. 2019 ; Vol. 483. pp. 34-41.
@article{926ca0a10f4f483fb8f57f4ac7d5061a,
title = "Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy",
abstract = "Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125{\%}. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.",
keywords = "Magnetic tunnel junction, Perpendicular magnetic anisotropy, Scanning probe microscopy",
author = "Mukund Bapna and Brad Parks and Samuel Oberdick and Hamid Almasi and Congli Sun and Paul Voyles and Weigang Wang and Majetich, {Sara A.}",
year = "2019",
month = "8",
day = "1",
doi = "10.1016/j.jmmm.2019.03.005",
language = "English (US)",
volume = "483",
pages = "34--41",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

AU - Bapna, Mukund

AU - Parks, Brad

AU - Oberdick, Samuel

AU - Almasi, Hamid

AU - Sun, Congli

AU - Voyles, Paul

AU - Wang, Weigang

AU - Majetich, Sara A.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.

AB - Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.

KW - Magnetic tunnel junction

KW - Perpendicular magnetic anisotropy

KW - Scanning probe microscopy

UR - http://www.scopus.com/inward/record.url?scp=85063194676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063194676&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2019.03.005

DO - 10.1016/j.jmmm.2019.03.005

M3 - Article

VL - 483

SP - 34

EP - 41

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -