Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.
- Magnetic tunnel junction
- Perpendicular magnetic anisotropy
- Scanning probe microscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics