Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

H. Almasi, M. Xu, Y. Xu, T. Newhouse-Illige, Weigang Wang

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The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.

Original languageEnglish (US)
Article number032401
JournalApplied Physics Letters
Issue number3
StatePublished - Jul 18 2016


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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