Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

T. Shang, Q. F. Zhan, H. L. Yang, Z. H. Zuo, Y. L. Xie, L. P. Liu, S. L. Zhang, Y. Zhang, H. H. Li, B. M. Wang, Y. H. Wu, S. Zhang, Run Wei Li

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Abstract

We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

Original languageEnglish (US)
Article number032410
JournalApplied Physics Letters
Volume109
Issue number3
DOIs
StatePublished - Jul 18 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Shang, T., Zhan, Q. F., Yang, H. L., Zuo, Z. H., Xie, Y. L., Liu, L. P., Zhang, S. L., Zhang, Y., Li, H. H., Wang, B. M., Wu, Y. H., Zhang, S., & Li, R. W. (2016). Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures. Applied Physics Letters, 109(3), [032410]. https://doi.org/10.1063/1.4959573