Effect of novel pad groove designs on the frictional and removal rate characteristics of ILD CMP

D. Rosales-Yeomans, T. Doi, M. Kinoshita, A. Philipossian

Research output: Contribution to conferencePaper

Abstract

The impact of parameters such as groove design, wafer pressure and relative pad-wafer velocity on average coefficient of friction (COF) and ILD removal rates of chemical and mechanical polishing (CMP) was investigated. The Sommerfield number, used in conjunction with COF, presented a useful method of describing the extent of contact in the pad-slurry-wafer interface. It was found that the amount of material removed was directly influenced by average COF. Combined grooving patterns, consisting of spiral and logarithmic grooves, influenced several key attributes of ILD polish in terms of slurry retention, tribological mechanism and material removal rates.

Original languageEnglish (US)
Pages166-173
Number of pages8
StatePublished - Dec 1 2003
EventChemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherChemical Mechanical Planarization VI - Proceddings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

ASJC Scopus subject areas

  • Engineering(all)

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    Rosales-Yeomans, D., Doi, T., Kinoshita, M., & Philipossian, A. (2003). Effect of novel pad groove designs on the frictional and removal rate characteristics of ILD CMP. 166-173. Paper presented at Chemical Mechanical Planarization VI - Proceddings of the International Symposium, Orlando, FL., United States.