Abstract
This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad-wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600 μm. On the other hand, when the groove width increased further to 900 μm, MRT continued to increase while η remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 60-63 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 157 |
| DOIs | |
| State | Published - May 1 2016 |
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Keywords
- Chemical mechanical planarization
- Mean residence time
- Slurry utilization efficiency
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP. / Mu, Yan; Zhuang, Yun; Sampurno, Yasa; Wei, Xiaomin; Ashizawa, Toranosuke; Morishima, Hiroyuki; Philipossian, Ara.
In: Microelectronic Engineering, Vol. 157, 01.05.2016, p. 60-63.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP
AU - Mu, Yan
AU - Zhuang, Yun
AU - Sampurno, Yasa
AU - Wei, Xiaomin
AU - Ashizawa, Toranosuke
AU - Morishima, Hiroyuki
AU - Philipossian, Ara
PY - 2016/5/1
Y1 - 2016/5/1
N2 - This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad-wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600 μm. On the other hand, when the groove width increased further to 900 μm, MRT continued to increase while η remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads.
AB - This paper studies the effect of pad groove width on slurry mean residence time (MRT) in the pad-wafer interface as well as slurry utilization efficiency (η) during chemical mechanical planarization. Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600 μm. On the other hand, when the groove width increased further to 900 μm, MRT continued to increase while η remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads.
KW - Chemical mechanical planarization
KW - Mean residence time
KW - Slurry utilization efficiency
UR - http://www.scopus.com/inward/record.url?scp=84959285732&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959285732&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2016.02.035
DO - 10.1016/j.mee.2016.02.035
M3 - Article
AN - SCOPUS:84959285732
VL - 157
SP - 60
EP - 63
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -