Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code: EP34

G. Teowee, J. M. Boulton, C. D. Baertlein, R. K. Wade, D. R. Uhlmann

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.

Original languageEnglish (US)
Pages (from-to)623-626
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Volume2
Issue number1-3
DOIs
StatePublished - Jan 1 1994

Keywords

  • ferroelectric
  • lead titanate
  • lead zirconate
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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