Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code: EP34

G. Teowee, J. M. Boulton, C. D. Baertlein, R. K. Wade, Donald R Uhlmann

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.

Original languageEnglish (US)
Pages (from-to)623-626
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Volume2
Issue number1-3
DOIs
StatePublished - Jan 1994

Fingerprint

Metallizing
Ferroelectric materials
Sol-gels
capacitors
Capacitors
gels
Annealing
Thin films
annealing
thin films
Remanence
Leakage currents
leakage
Permittivity
permittivity
Temperature
Electrodes
electrodes
polarization
temperature

Keywords

  • ferroelectric
  • lead titanate
  • lead zirconate
  • thin films

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code : EP34. / Teowee, G.; Boulton, J. M.; Baertlein, C. D.; Wade, R. K.; Uhlmann, Donald R.

In: Journal of Sol-Gel Science and Technology, Vol. 2, No. 1-3, 01.1994, p. 623-626.

Research output: Contribution to journalArticle

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