Effect of pretreatment of high-dose implanted resists by activated hydrogen peroxide chemical systems for their effective removal by conventional sulfuric-peroxide mixtures

Rajkumar Govindarajan, Manish K Keswani, Srini Raghavan, Arpad Somogyi

Research output: Contribution to journalArticle

Abstract

Stripping of photoresists (PRs) exposed to high-dose (>1E15 atoms/cm 2) ion beams is one of the most challenging steps in front-end-of-line (FEOL) processing. This is due to a refractory crust that forms on the resist surface during ion implantation. The objective of this paper is to investigate the use of hydrogen peroxide systems activated by metal ion or ultraviolet (UV) light for disrupting crust formed on deep UV resist to enable complete removal of crust as well as underlying PR. Systematic investigation of variables such as hydrogen peroxide and metal ion concentration and UV intensity has led to the development of an optimal formulation for attacking the crust. Optical microscopy, confocal microscopy, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy have been used to monitor the removal of the resist. A two-step process involving pretreatment with activated hydrogen peroxide solution followed by treatment with sulfuric acid-hydrogen peroxide mixture to remove crust and underlying resist has been developed.

Original languageEnglish (US)
Article number6172247
Pages (from-to)523-530
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Volume25
Issue number3
DOIs
StatePublished - 2012

Fingerprint

Peroxides
peroxides
hydrogen peroxide
Hydrogen peroxide
pretreatment
Hydrogen Peroxide
crusts
dosage
Photoresists
Metal ions
photoresists
metal ions
Confocal microscopy
microscopy
disrupting
Sulfuric acid
Ion implantation
Field emission
Refractory materials
Ion beams

Keywords

  • Activated hydrogen peroxide
  • high-dose implanted resist stripping (HDIS)
  • photoresist
  • sulfuric peroxide mixtures (SPMs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Effect of pretreatment of high-dose implanted resists by activated hydrogen peroxide chemical systems for their effective removal by conventional sulfuric-peroxide mixtures",
abstract = "Stripping of photoresists (PRs) exposed to high-dose (>1E15 atoms/cm 2) ion beams is one of the most challenging steps in front-end-of-line (FEOL) processing. This is due to a refractory crust that forms on the resist surface during ion implantation. The objective of this paper is to investigate the use of hydrogen peroxide systems activated by metal ion or ultraviolet (UV) light for disrupting crust formed on deep UV resist to enable complete removal of crust as well as underlying PR. Systematic investigation of variables such as hydrogen peroxide and metal ion concentration and UV intensity has led to the development of an optimal formulation for attacking the crust. Optical microscopy, confocal microscopy, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy have been used to monitor the removal of the resist. A two-step process involving pretreatment with activated hydrogen peroxide solution followed by treatment with sulfuric acid-hydrogen peroxide mixture to remove crust and underlying resist has been developed.",
keywords = "Activated hydrogen peroxide, high-dose implanted resist stripping (HDIS), photoresist, sulfuric peroxide mixtures (SPMs)",
author = "Rajkumar Govindarajan and Keswani, {Manish K} and Srini Raghavan and Arpad Somogyi",
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AU - Govindarajan, Rajkumar

AU - Keswani, Manish K

AU - Raghavan, Srini

AU - Somogyi, Arpad

PY - 2012

Y1 - 2012

N2 - Stripping of photoresists (PRs) exposed to high-dose (>1E15 atoms/cm 2) ion beams is one of the most challenging steps in front-end-of-line (FEOL) processing. This is due to a refractory crust that forms on the resist surface during ion implantation. The objective of this paper is to investigate the use of hydrogen peroxide systems activated by metal ion or ultraviolet (UV) light for disrupting crust formed on deep UV resist to enable complete removal of crust as well as underlying PR. Systematic investigation of variables such as hydrogen peroxide and metal ion concentration and UV intensity has led to the development of an optimal formulation for attacking the crust. Optical microscopy, confocal microscopy, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy have been used to monitor the removal of the resist. A two-step process involving pretreatment with activated hydrogen peroxide solution followed by treatment with sulfuric acid-hydrogen peroxide mixture to remove crust and underlying resist has been developed.

AB - Stripping of photoresists (PRs) exposed to high-dose (>1E15 atoms/cm 2) ion beams is one of the most challenging steps in front-end-of-line (FEOL) processing. This is due to a refractory crust that forms on the resist surface during ion implantation. The objective of this paper is to investigate the use of hydrogen peroxide systems activated by metal ion or ultraviolet (UV) light for disrupting crust formed on deep UV resist to enable complete removal of crust as well as underlying PR. Systematic investigation of variables such as hydrogen peroxide and metal ion concentration and UV intensity has led to the development of an optimal formulation for attacking the crust. Optical microscopy, confocal microscopy, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy have been used to monitor the removal of the resist. A two-step process involving pretreatment with activated hydrogen peroxide solution followed by treatment with sulfuric acid-hydrogen peroxide mixture to remove crust and underlying resist has been developed.

KW - Activated hydrogen peroxide

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KW - photoresist

KW - sulfuric peroxide mixtures (SPMs)

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