Effect of process temperature on coefficient of friction during CMP

J. Sorooshian, D. Hetherington, Ara Philipossian

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

This study investigates the effect of heat generation and thermal inputs on the frictional characteristics of interlayer dielectric (ILD) and copper chemical mechanical planarization (CMP) processes. A series of ILD and copper polishes were completed with controlled pad temperatures of ∼ 12, 22, 33, and 45°C and various pressures and velocities. Coefficient of friction results indicated an increasing trend for ILD and copper polishing with a rise in polishing temperature. Dynamic mechanical analysis of the used polishing pads revealed links between the softening effects of the pad with rising temperatures and increased shear forces resulting from the contact of the pad and wafer during polishing. The results presented are critical for establishing pad designs with stable dynamic mechanical properties and prolonged pad life.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume7
Issue number10
DOIs
StatePublished - 2004

Fingerprint

Chemical mechanical polishing
Polishing
coefficient of friction
Friction
polishing
Copper
interlayers
copper
Temperature
temperature
Heat generation
Dynamic mechanical analysis
heat generation
softening
Mechanical properties
wafers
mechanical properties
shear
trends

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Effect of process temperature on coefficient of friction during CMP. / Sorooshian, J.; Hetherington, D.; Philipossian, Ara.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 10, 2004.

Research output: Contribution to journalArticle

@article{4b8ea19a3296493cb07779dc948765a1,
title = "Effect of process temperature on coefficient of friction during CMP",
abstract = "This study investigates the effect of heat generation and thermal inputs on the frictional characteristics of interlayer dielectric (ILD) and copper chemical mechanical planarization (CMP) processes. A series of ILD and copper polishes were completed with controlled pad temperatures of ∼ 12, 22, 33, and 45°C and various pressures and velocities. Coefficient of friction results indicated an increasing trend for ILD and copper polishing with a rise in polishing temperature. Dynamic mechanical analysis of the used polishing pads revealed links between the softening effects of the pad with rising temperatures and increased shear forces resulting from the contact of the pad and wafer during polishing. The results presented are critical for establishing pad designs with stable dynamic mechanical properties and prolonged pad life.",
author = "J. Sorooshian and D. Hetherington and Ara Philipossian",
year = "2004",
doi = "10.1149/1.1792240",
language = "English (US)",
volume = "7",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

TY - JOUR

T1 - Effect of process temperature on coefficient of friction during CMP

AU - Sorooshian, J.

AU - Hetherington, D.

AU - Philipossian, Ara

PY - 2004

Y1 - 2004

N2 - This study investigates the effect of heat generation and thermal inputs on the frictional characteristics of interlayer dielectric (ILD) and copper chemical mechanical planarization (CMP) processes. A series of ILD and copper polishes were completed with controlled pad temperatures of ∼ 12, 22, 33, and 45°C and various pressures and velocities. Coefficient of friction results indicated an increasing trend for ILD and copper polishing with a rise in polishing temperature. Dynamic mechanical analysis of the used polishing pads revealed links between the softening effects of the pad with rising temperatures and increased shear forces resulting from the contact of the pad and wafer during polishing. The results presented are critical for establishing pad designs with stable dynamic mechanical properties and prolonged pad life.

AB - This study investigates the effect of heat generation and thermal inputs on the frictional characteristics of interlayer dielectric (ILD) and copper chemical mechanical planarization (CMP) processes. A series of ILD and copper polishes were completed with controlled pad temperatures of ∼ 12, 22, 33, and 45°C and various pressures and velocities. Coefficient of friction results indicated an increasing trend for ILD and copper polishing with a rise in polishing temperature. Dynamic mechanical analysis of the used polishing pads revealed links between the softening effects of the pad with rising temperatures and increased shear forces resulting from the contact of the pad and wafer during polishing. The results presented are critical for establishing pad designs with stable dynamic mechanical properties and prolonged pad life.

UR - http://www.scopus.com/inward/record.url?scp=8344227687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8344227687&partnerID=8YFLogxK

U2 - 10.1149/1.1792240

DO - 10.1149/1.1792240

M3 - Article

AN - SCOPUS:8344227687

VL - 7

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 10

ER -