Effect of retaining ring slot design on slurry film thickness during CMP

Xiaomin Wei, Yasa Adi Sampurno, Yun Zhuang, Roy Dittler, Anand Meled, Jiang Cheng, Christopher Wargo, Ralph Stankowski, Ara Philipossian

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8 Scopus citations

Abstract

This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with "standard" and "alternative" slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the "alternative" slot design generated, on average, 30% thicker slurry film compared with the ring with the "standard" slot design.

Original languageEnglish (US)
Pages (from-to)H119-H121
JournalElectrochemical and Solid-State Letters
Volume13
Issue number4
DOIs
StatePublished - Feb 22 2010

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ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Wei, X., Sampurno, Y. A., Zhuang, Y., Dittler, R., Meled, A., Cheng, J., Wargo, C., Stankowski, R., & Philipossian, A. (2010). Effect of retaining ring slot design on slurry film thickness during CMP. Electrochemical and Solid-State Letters, 13(4), H119-H121. https://doi.org/10.1149/1.3294496