Effect of silicon wafer cleaning on pre and post thermal oxidation charges

Allan Resnick, Emil Kamieniecki, Ara Philipossian, Daniel Jackson

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

A controlled study is reported in which a correlation between pre and post oxidation charge is established. This study utilizes a Surface Charge Analyzer (SCA) to measure electrically active contamination on the surface of silicon wafers. The SCA is a new surface photovoltage technique using low intensity light chopped at high frequencies to characterize the electrical properties of a silicon wafer surface. The method does not require any additional processing. By measuring charge values after pre oxidation cleaning, gate oxidation, and anneal it is shown that the contamination left on bare wafers is highly dependent on the last steps of the cleaning process. It is also shown that this contamination has a significant impact on the quality of a subsequent gate oxidation. A higher temperature nitrogen anneal reduces the oxide charge variation observed, but is not sufficient to compensate for charge induced at cleaning.

Original languageEnglish (US)
Pages (from-to)335-340
Number of pages6
JournalProceedings - The Electrochemical Society
Volume90
Issue number9
StatePublished - Dec 1 1990
Externally publishedYes
EventProcedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (held at the 176th Meeting of the Electrochemical Society) - Hollywood, FL, USA
Duration: Oct 15 1989Oct 20 1989

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this