Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers

Michael M. Dion, Mahmoud Fallahi, F. Chatenoud, Ian M. Templeton, Andre Delage, Richard A. Barber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Results will be presented on the variation of threshold current and emission wavelength with temperature of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) lasers, in the range 10 - 90°C. The structures were grown by one-step MBE and the circular gratings were defined by electron-beam lithography. Measurements were made pulsed and CW. The characteristic temperature ranged between 18 - 48 K. A wavelength variation with temperature of around 0.1 nm/°C was obtained. The results are compared with those of linear, GaAs- based DBR lasers.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsS.Iraj Najafi, Mahmoud Fallahi, Nasser Peyghambarian
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages5-9
Number of pages5
ISBN (Print)0819417459
StatePublished - 1995
Externally publishedYes
EventCircular-Grating Light-Emitting Sources - San Jose, USA
Duration: Feb 6 1995Feb 6 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2398
ISSN (Print)0277-786X

Other

OtherCircular-Grating Light-Emitting Sources
CitySan Jose, USA
Period2/6/952/6/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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