Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process

Yasa Sampurno, Yun Zhuang, Xun Gu, Sian Theng, Takenao Nemoto, Ting Sun, Fransisca Sudargho, Akinobu Teramoto, Ara Philipossian, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages363-366
Number of pages4
Volume145-146
ISBN (Print)3908451647, 9783908451648
DOIs
StatePublished - 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: Sep 22 2008Sep 24 2008

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)10120394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period9/22/089/24/08

Fingerprint

scrubbers
Chemical mechanical polishing
Scrubbers
brushes
Brushes
cleaning
Copper
Cleaning
Kinematics
kinematics
copper
washing
wafers
contamination
alcohols
Alcohols
Contamination
Fluids

Keywords

  • Brush
  • Citric acid
  • Cleaning process
  • Cleaning solutions
  • Down force
  • Frictional force
  • Post copper CMP
  • PVA
  • Rotational rate
  • Shear force
  • Slurry
  • Surfactant

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Sampurno, Y., Zhuang, Y., Gu, X., Theng, S., Nemoto, T., Sun, T., ... Ohmi, T. (2009). Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process. In Solid State Phenomena (Vol. 145-146, pp. 363-366). (Solid State Phenomena; Vol. 145-146). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.145-146.363

Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process. / Sampurno, Yasa; Zhuang, Yun; Gu, Xun; Theng, Sian; Nemoto, Takenao; Sun, Ting; Sudargho, Fransisca; Teramoto, Akinobu; Philipossian, Ara; Ohmi, Tadahiro.

Solid State Phenomena. Vol. 145-146 Trans Tech Publications Ltd, 2009. p. 363-366 (Solid State Phenomena; Vol. 145-146).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sampurno, Y, Zhuang, Y, Gu, X, Theng, S, Nemoto, T, Sun, T, Sudargho, F, Teramoto, A, Philipossian, A & Ohmi, T 2009, Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process. in Solid State Phenomena. vol. 145-146, Solid State Phenomena, vol. 145-146, Trans Tech Publications Ltd, pp. 363-366, 9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008, Bruges, Belgium, 9/22/08. https://doi.org/10.4028/www.scientific.net/SSP.145-146.363
Sampurno Y, Zhuang Y, Gu X, Theng S, Nemoto T, Sun T et al. Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process. In Solid State Phenomena. Vol. 145-146. Trans Tech Publications Ltd. 2009. p. 363-366. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.145-146.363
Sampurno, Yasa ; Zhuang, Yun ; Gu, Xun ; Theng, Sian ; Nemoto, Takenao ; Sun, Ting ; Sudargho, Fransisca ; Teramoto, Akinobu ; Philipossian, Ara ; Ohmi, Tadahiro. / Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process. Solid State Phenomena. Vol. 145-146 Trans Tech Publications Ltd, 2009. pp. 363-366 (Solid State Phenomena).
@inproceedings{79fd8a085bf147389333a07687713983,
title = "Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process",
abstract = "Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.",
keywords = "Brush, Citric acid, Cleaning process, Cleaning solutions, Down force, Frictional force, Post copper CMP, PVA, Rotational rate, Shear force, Slurry, Surfactant",
author = "Yasa Sampurno and Yun Zhuang and Xun Gu and Sian Theng and Takenao Nemoto and Ting Sun and Fransisca Sudargho and Akinobu Teramoto and Ara Philipossian and Tadahiro Ohmi",
year = "2009",
doi = "10.4028/www.scientific.net/SSP.145-146.363",
language = "English (US)",
isbn = "3908451647",
volume = "145-146",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "363--366",
booktitle = "Solid State Phenomena",

}

TY - GEN

T1 - Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process

AU - Sampurno, Yasa

AU - Zhuang, Yun

AU - Gu, Xun

AU - Theng, Sian

AU - Nemoto, Takenao

AU - Sun, Ting

AU - Sudargho, Fransisca

AU - Teramoto, Akinobu

AU - Philipossian, Ara

AU - Ohmi, Tadahiro

PY - 2009

Y1 - 2009

N2 - Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.

AB - Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.

KW - Brush

KW - Citric acid

KW - Cleaning process

KW - Cleaning solutions

KW - Down force

KW - Frictional force

KW - Post copper CMP

KW - PVA

KW - Rotational rate

KW - Shear force

KW - Slurry

KW - Surfactant

UR - http://www.scopus.com/inward/record.url?scp=75849120065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75849120065&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.145-146.363

DO - 10.4028/www.scientific.net/SSP.145-146.363

M3 - Conference contribution

AN - SCOPUS:75849120065

SN - 3908451647

SN - 9783908451648

VL - 145-146

T3 - Solid State Phenomena

SP - 363

EP - 366

BT - Solid State Phenomena

PB - Trans Tech Publications Ltd

ER -