Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor

Majid M. Mansoori, Farhang Shadman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The impurity dynamics inside an inter-wafer region of a Vertical Thermal Silicon Oxidation Reactor has been studied. The study focuses on the effects of wafer size on drydown cycles. While processing larger size wafers has certain economic advantages, much longer drydown cycles are required to achieve acceptable impurity levels and gas phase uniformity inside the inter-wafer spacing.

Original languageEnglish (US)
Title of host publicationInstitute of Environmental Sciences - Proceedings, Annual Technical Meeting
PublisherInst of Environmental Sciences
Pages246-250
Number of pages5
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 42nd Annual Technical Meeting of the Institute of Environmental Sciences - Orlando, FL, USA
Duration: May 12 1996May 16 1996

Other

OtherProceedings of the 1996 42nd Annual Technical Meeting of the Institute of Environmental Sciences
CityOrlando, FL, USA
Period5/12/965/16/96

    Fingerprint

ASJC Scopus subject areas

  • Environmental Engineering

Cite this

Mansoori, M. M., & Shadman, F. (1996). Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor. In Institute of Environmental Sciences - Proceedings, Annual Technical Meeting (pp. 246-250). Inst of Environmental Sciences.