Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper

Dinesh Padmanabhan Ramalekshmi Thanu, Srini Raghavan, Manish K Keswani

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

Original languageEnglish (US)
Article number6170592
Pages (from-to)516-522
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume25
Issue number3
DOIs
StatePublished - 2012

Fingerprint

choline
Choline
ureas
Urea
eutectics
Eutectics
Copper
chlorides
Hydrofluoric Acid
copper
Hydrofluoric acid
Water
hydrofluoric acid
deep water
water
Siloxanes
Plasma etching
siloxanes
Spin coating
plasma etching

Keywords

  • CF /O plasma
  • copper corrosion
  • deep eutectic solvents
  • post-etch residues
  • siloxane-based low-k

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper",
abstract = "Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90{\%} water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49{\%}) volume ratio] dilute HF solutions.",
keywords = "CF /O plasma, copper corrosion, deep eutectic solvents, post-etch residues, siloxane-based low-k",
author = "Thanu, {Dinesh Padmanabhan Ramalekshmi} and Srini Raghavan and Keswani, {Manish K}",
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AU - Thanu, Dinesh Padmanabhan Ramalekshmi

AU - Raghavan, Srini

AU - Keswani, Manish K

PY - 2012

Y1 - 2012

N2 - Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

AB - Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

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KW - siloxane-based low-k

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