Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper

Dinesh Padmanabhan Ramalekshmi Thanu, Srini Raghavan, Manish Keswani

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

Original languageEnglish (US)
Article number6170592
Pages (from-to)516-522
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume25
Issue number3
DOIs
StatePublished - Aug 13 2012

Keywords

  • CF /O plasma
  • copper corrosion
  • deep eutectic solvents
  • post-etch residues
  • siloxane-based low-k

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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