Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

Lubna R. Shah, Hao Zhu, W. G. Wang, Bakhtyar Ali, Tao Zhu, Xin Fan, Y. Q. Song, Q. Y. Wen, H. W. Zhang, S. Ismat Shah, John Q. Xiao

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

Original languageEnglish (US)
Article number035002
JournalJournal of Physics D: Applied Physics
Volume43
Issue number3
DOIs
StatePublished - Jan 28 2010
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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