Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

Lubna R. Shah, Hao Zhu, Weigang Wang, Bakhtyar Ali, Tao Zhu, Xin Fan, Y. Q. Song, Q. Y. Wen, H. W. Zhang, S. Ismat Shah, John Q. Xiao

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

Original languageEnglish (US)
Article number035002
JournalJournal of Physics D: Applied Physics
Volume43
Issue number3
DOIs
StatePublished - 2010
Externally publishedYes

Fingerprint

Transport properties
Magnetic properties
interstitials
transport properties
magnetic properties
Gene Conversion
Ferromagnetism
Temperature
Carrier concentration
Zinc
Structural properties
Ions
Semiconductor materials
ferromagnetism
zinc
thresholds
temperature
room temperature
Experiments
ions

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO. / Shah, Lubna R.; Zhu, Hao; Wang, Weigang; Ali, Bakhtyar; Zhu, Tao; Fan, Xin; Song, Y. Q.; Wen, Q. Y.; Zhang, H. W.; Shah, S. Ismat; Xiao, John Q.

In: Journal of Physics D: Applied Physics, Vol. 43, No. 3, 035002, 2010.

Research output: Contribution to journalArticle

Shah, LR, Zhu, H, Wang, W, Ali, B, Zhu, T, Fan, X, Song, YQ, Wen, QY, Zhang, HW, Shah, SI & Xiao, JQ 2010, 'Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO', Journal of Physics D: Applied Physics, vol. 43, no. 3, 035002. https://doi.org/10.1088/0022-3727/43/3/035002
Shah, Lubna R. ; Zhu, Hao ; Wang, Weigang ; Ali, Bakhtyar ; Zhu, Tao ; Fan, Xin ; Song, Y. Q. ; Wen, Q. Y. ; Zhang, H. W. ; Shah, S. Ismat ; Xiao, John Q. / Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO. In: Journal of Physics D: Applied Physics. 2010 ; Vol. 43, No. 3.
@article{27191a5814b149e79ae2112027905df9,
title = "Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO",
abstract = "We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.",
author = "Shah, {Lubna R.} and Hao Zhu and Weigang Wang and Bakhtyar Ali and Tao Zhu and Xin Fan and Song, {Y. Q.} and Wen, {Q. Y.} and Zhang, {H. W.} and Shah, {S. Ismat} and Xiao, {John Q.}",
year = "2010",
doi = "10.1088/0022-3727/43/3/035002",
language = "English (US)",
volume = "43",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

AU - Shah, Lubna R.

AU - Zhu, Hao

AU - Wang, Weigang

AU - Ali, Bakhtyar

AU - Zhu, Tao

AU - Fan, Xin

AU - Song, Y. Q.

AU - Wen, Q. Y.

AU - Zhang, H. W.

AU - Shah, S. Ismat

AU - Xiao, John Q.

PY - 2010

Y1 - 2010

N2 - We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

AB - We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

UR - http://www.scopus.com/inward/record.url?scp=74849125951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74849125951&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/43/3/035002

DO - 10.1088/0022-3727/43/3/035002

M3 - Article

AN - SCOPUS:74849125951

VL - 43

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 3

M1 - 035002

ER -