Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films

G. Teowee, J. M. Boulton, E. A. Kneer, M. N. Orr, D. P. Birnie, D. R. Uhlmann, S. C. Lee, K. F. Galloway, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

A series of sol-gel-derived PZT (lead zirconate titanate) films with Zr:Ti ratios of 100:0, 94:6, 80:20, 65:35, 53:47, 35:65, 20:80, and 0:100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700 degrees C where they were all single-phase perovskite as determined by XRD (X-ray diffraction). Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130-mu m by 130-mu m electrode pads. The ferroelectric properties on these pads were measured along with the leakage characteristics. The dielectric and ferroelectric properties of the PZT films were found to be highly dependent on composition and processing conditions.

Original languageEnglish (US)
Title of host publicationISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics
EditorsMichael Liu, Ahmad Safari, Angus Kingon, Gene Haertling
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages424-427
Number of pages4
ISBN (Electronic)0780304659, 9780780304659
DOIs
StatePublished - Jan 1 1992
Event8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992 - Greenville, United States
Duration: Aug 30 1992Sep 2 1992

Publication series

NameISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992
CountryUnited States
CityGreenville
Period8/30/929/2/92

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Teowee, G., Boulton, J. M., Kneer, E. A., Orr, M. N., Birnie, D. P., Uhlmann, D. R., Lee, S. C., Galloway, K. F., & Schrimpf, R. D. (1992). Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films. In M. Liu, A. Safari, A. Kingon, & G. Haertling (Eds.), ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics (pp. 424-427). [300601] (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.1992.300601