Effective mass anisotropy of hot electrons in nonparabolic conduction bands of n-doped InGaAs films using ultrafast Terahertz pump-probe techniques

F. Blanchard, D. Golde, F. H. Su, L. Razzari, G. Sharma, R. Morandotti, T. Ozaki, M. Reid, M. Kira, S. W. Koch, F. A. Hegmann

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

The anisotropic effective mass of energetic electrons in an isotropic, nonparabolic conduction band is revealed using ultrafast THz-pump-THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is applied to identify the origin of the observed anisotropy and to show that the self-consistent light-matter coupling contributes significantly to the THz response.

Original languageEnglish (US)
Article number107401
JournalPhysical review letters
Volume107
Issue number10
DOIs
StatePublished - Aug 31 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Blanchard, F., Golde, D., Su, F. H., Razzari, L., Sharma, G., Morandotti, R., Ozaki, T., Reid, M., Kira, M., Koch, S. W., & Hegmann, F. A. (2011). Effective mass anisotropy of hot electrons in nonparabolic conduction bands of n-doped InGaAs films using ultrafast Terahertz pump-probe techniques. Physical review letters, 107(10), [107401]. https://doi.org/10.1103/PhysRevLett.107.107401