Effects of Coulomb interaction in intentionally disordered semiconductor superlattices

G. Richter, W. Stolz, P. Thomas, S. W. Koch, K. Maschke, I. P. Zvyagin

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

The interplay between disorder and electron-electron interaction is studied using measurements of the vertical dc conductivity of intentionally disordered GaAs/Al0.3Ga0.7As superlattices. At low temperatures a quasimetallic behavior is observed even for large disorder which is attributed to an inhomogeneous charge distribution reducing the disorder potential. At low doping levels and low temperatures, exchange-correlation interaction leads to an inhomogeneous charge distribution over the wells of ordered superlattices similar to a one-dimensional Wigner lattice.

Original languageEnglish (US)
Pages (from-to)475-480
Number of pages6
JournalSuperlattices and Microstructures
Volume22
Issue number4
DOIs
StatePublished - Dec 1997

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this