Effects of current on nanoscale ring-shaped magnetic tunnel junctions

Hong Xiang Wei, Jiexuan He, Zhen Chao Wen, Xiu Feng Han, Wen Shan Zhan, Shufeng Zhang

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of 6× 106 A/ cm2, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.

Original languageEnglish (US)
Article number134432
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number13
DOIs
StatePublished - Apr 17 2008
Externally publishedYes

Fingerprint

Tunnel junctions
tunnel junctions
Magnetization
rings
Induced currents
Electric currents
magnetization
Current density
Torque
electric current
torque
current density
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effects of current on nanoscale ring-shaped magnetic tunnel junctions. / Wei, Hong Xiang; He, Jiexuan; Wen, Zhen Chao; Han, Xiu Feng; Zhan, Wen Shan; Zhang, Shufeng.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 13, 134432, 17.04.2008.

Research output: Contribution to journalArticle

Wei, Hong Xiang ; He, Jiexuan ; Wen, Zhen Chao ; Han, Xiu Feng ; Zhan, Wen Shan ; Zhang, Shufeng. / Effects of current on nanoscale ring-shaped magnetic tunnel junctions. In: Physical Review B - Condensed Matter and Materials Physics. 2008 ; Vol. 77, No. 13.
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