Effects of field dependent mobility and contact barriers on liquid crystalline phthalocyanine organic transistors

Samir Cherian, Carrie Donley, David Mathine, Lynn LaRussa, Wei Xia, Neal R Armstrong

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Copper phthalocyanine (CuPc) transistors were fabricated using the Langmuir-Blodgett technique to produce bottom contact organic field effect transistors (OFETs) on silicon substrates. The resultant devices were measured and the performance was analyzed using a two-dimensional numerical simulation of the device structure. A hole barrier at the Au/phthalocyanine source and drain contacts was seen from the experimental data. The numerical simulations were used to extract a barrier height of 0.415 eV at the Au/phthalocyanine contacts. Also, a Frenkel-Poole mobility model was used to account for the drain current in the transistors and a high field mobility of 0.018 cm 2/V sec was extracted from the experimental data. The resultant device parameters were compared to simple analytical results and the benefits of enhanced two-dimensional modeling of OFETs are shown.

Original languageEnglish (US)
Pages (from-to)5638-5643
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number10
DOIs
StatePublished - Nov 15 2004

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transistors
field effect transistors
liquids
simulation
copper
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effects of field dependent mobility and contact barriers on liquid crystalline phthalocyanine organic transistors. / Cherian, Samir; Donley, Carrie; Mathine, David; LaRussa, Lynn; Xia, Wei; Armstrong, Neal R.

In: Journal of Applied Physics, Vol. 96, No. 10, 15.11.2004, p. 5638-5643.

Research output: Contribution to journalArticle

Cherian, Samir ; Donley, Carrie ; Mathine, David ; LaRussa, Lynn ; Xia, Wei ; Armstrong, Neal R. / Effects of field dependent mobility and contact barriers on liquid crystalline phthalocyanine organic transistors. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 10. pp. 5638-5643.
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