Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films

Xin Zhang, Tong Yi Zhang, Man Wong, Yitshak Zohar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The effects of regular furnace and high-temperature rapid thermal annealing (RTA) on the residual stress of LPCVD-polysilicon thin films were investigated. The as-deposited 0.5 μm thick polysilicon films had an initial compressive stress of about 340 MPa, and the residual stress was relaxed quickly after a few cycles of RTA at the higher temperatures. The stress variation with annealing time at temperatures of 900-1150 °C was analyzed. Using X-ray diffraction (XRD), micro-Raman spectroscopy and transmission electron microscopy (TEM), the changes in the microstructure of the thin films, induced by the RTA, during the stress relaxation were studied. Compared to regular furnace annealing, rapid thermal annealing can reduce stress in a short time and is an effective method for releasing the residual stress in polysilicon thin films.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
Editors Anon
PublisherIEEE
Pages535-540
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS - Nagoya, Jpn
Duration: Jan 26 1997Jan 30 1997

Other

OtherProceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS
CityNagoya, Jpn
Period1/26/971/30/97

Fingerprint

Rapid thermal annealing
Polysilicon
Residual stresses
Thin films
Furnaces
Annealing
Temperature
Stress relaxation
Compressive stress
Raman spectroscopy
Transmission electron microscopy
X ray diffraction
Microstructure

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

Zhang, X., Zhang, T. Y., Wong, M., & Zohar, Y. (1997). Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films. In Anon (Ed.), Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (pp. 535-540). IEEE.

Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films. / Zhang, Xin; Zhang, Tong Yi; Wong, Man; Zohar, Yitshak.

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). ed. / Anon. IEEE, 1997. p. 535-540.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, X, Zhang, TY, Wong, M & Zohar, Y 1997, Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films. in Anon (ed.), Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). IEEE, pp. 535-540, Proceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS, Nagoya, Jpn, 1/26/97.
Zhang X, Zhang TY, Wong M, Zohar Y. Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films. In Anon, editor, Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). IEEE. 1997. p. 535-540
Zhang, Xin ; Zhang, Tong Yi ; Wong, Man ; Zohar, Yitshak. / Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films. Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). editor / Anon. IEEE, 1997. pp. 535-540
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AB - The effects of regular furnace and high-temperature rapid thermal annealing (RTA) on the residual stress of LPCVD-polysilicon thin films were investigated. The as-deposited 0.5 μm thick polysilicon films had an initial compressive stress of about 340 MPa, and the residual stress was relaxed quickly after a few cycles of RTA at the higher temperatures. The stress variation with annealing time at temperatures of 900-1150 °C was analyzed. Using X-ray diffraction (XRD), micro-Raman spectroscopy and transmission electron microscopy (TEM), the changes in the microstructure of the thin films, induced by the RTA, during the stress relaxation were studied. Compared to regular furnace annealing, rapid thermal annealing can reduce stress in a short time and is an effective method for releasing the residual stress in polysilicon thin films.

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