Effects of mask roughness and condenser scattering in EUVL systems

N. A. Beaudry, Thomas D Milster

Research output: Chapter in Book/Report/Conference proceedingChapter

33 Citations (Scopus)

Abstract

The wavefront reflected from extreme ultraviolet lithography (EUVL) mirror and mask surfaces can contain a non-negligible amount of phase variation due to roughness of the mirror surfaces and variations in multilayer thin-film coatings. We examine the characteristics of image and pattern formation as a function of phase variations originating at the mask surface and at condenser mirrors. A theoretical development and a Monte-Carlo simulation are used to show relationships between statistics of the phase variations and the mask pattern, coherence factor, and numerical aperture of the projection camera. Results indicate that it is possible to produce nearly 1% line-edge roughness in a photoresist pattern from moderate values of phase variations.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages653-662
Number of pages10
Volume3676
EditionII
StatePublished - 1999
EventProceedings of the 1999 Emerging Lithographic Technologies III - Santa Clara, CA, USA
Duration: Mar 15 1999Mar 17 1999

Other

OtherProceedings of the 1999 Emerging Lithographic Technologies III
CitySanta Clara, CA, USA
Period3/15/993/17/99

Fingerprint

Extreme ultraviolet lithography
condensers
Masks
roughness
masks
lithography
Surface roughness
Scattering
Mirrors
scattering
mirrors
Multilayer films
Photoresists
Wavefronts
Cameras
Statistics
Thin films
Coatings
numerical aperture
photoresists

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Beaudry, N. A., & Milster, T. D. (1999). Effects of mask roughness and condenser scattering in EUVL systems. In Proceedings of SPIE - The International Society for Optical Engineering (II ed., Vol. 3676, pp. 653-662). Society of Photo-Optical Instrumentation Engineers.

Effects of mask roughness and condenser scattering in EUVL systems. / Beaudry, N. A.; Milster, Thomas D.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3676 II. ed. Society of Photo-Optical Instrumentation Engineers, 1999. p. 653-662.

Research output: Chapter in Book/Report/Conference proceedingChapter

Beaudry, NA & Milster, TD 1999, Effects of mask roughness and condenser scattering in EUVL systems. in Proceedings of SPIE - The International Society for Optical Engineering. II edn, vol. 3676, Society of Photo-Optical Instrumentation Engineers, pp. 653-662, Proceedings of the 1999 Emerging Lithographic Technologies III, Santa Clara, CA, USA, 3/15/99.
Beaudry NA, Milster TD. Effects of mask roughness and condenser scattering in EUVL systems. In Proceedings of SPIE - The International Society for Optical Engineering. II ed. Vol. 3676. Society of Photo-Optical Instrumentation Engineers. 1999. p. 653-662
Beaudry, N. A. ; Milster, Thomas D. / Effects of mask roughness and condenser scattering in EUVL systems. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3676 II. ed. Society of Photo-Optical Instrumentation Engineers, 1999. pp. 653-662
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