Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO3 films

G. Teowee, C. D. Baertlein, S. A. Schlegel, J. M. Boulton, Donald R Uhlmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ferroelectric (FE) films, especially PZT films, have received increasing attention for microelectronics applications such as FE memory and in high density DRAM's. While rare earth doped PbTiO3 ceramics has been studied for SAW and piezoelectric applications, rare earth-doped films seldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths (such as, Nd, Sm, Tb, Dy, Er, Yb and La) have been prepared using acetates and alkoxides as precursors. The solutions were spin coated onto platinized Si wafers. The effects of the type and amount of rare incorporation on the phase assembly and microstructure have been quantified. The results of dielectric characterization (e.g., dielectric constant, dissipation factor and leakage currents) and FE behaviors (viz.remanent polarization, and coercive field) are presented; these films exhibited low leakage currents (3E-10 A/cm2) and much higher dielectric constant (up to 525) compared to undopeal PbTiO3 films.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages291-296
Number of pages6
Volume346
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

Fingerprint

Dielectric properties
Rare earths
Ferroelectric materials
Sol-gels
Leakage currents
Permittivity
Ferroelectric films
Remanence
Dynamic random access storage
Microelectronics
Acetates
Data storage equipment
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Teowee, G., Baertlein, C. D., Schlegel, S. A., Boulton, J. M., & Uhlmann, D. R. (1994). Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO3 films. In Materials Research Society Symposium - Proceedings (Vol. 346, pp. 291-296). Materials Research Society.

Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO3 films. / Teowee, G.; Baertlein, C. D.; Schlegel, S. A.; Boulton, J. M.; Uhlmann, Donald R.

Materials Research Society Symposium - Proceedings. Vol. 346 Materials Research Society, 1994. p. 291-296.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Teowee, G, Baertlein, CD, Schlegel, SA, Boulton, JM & Uhlmann, DR 1994, Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO3 films. in Materials Research Society Symposium - Proceedings. vol. 346, Materials Research Society, pp. 291-296, Proceedings of the 1994 MRS Spring Meeting, San Francisco, CA, USA, 4/4/94.
Teowee G, Baertlein CD, Schlegel SA, Boulton JM, Uhlmann DR. Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO3 films. In Materials Research Society Symposium - Proceedings. Vol. 346. Materials Research Society. 1994. p. 291-296
Teowee, G. ; Baertlein, C. D. ; Schlegel, S. A. ; Boulton, J. M. ; Uhlmann, Donald R. / Effects of rare earth incorporation on the ferroelectric and dielectric properties of sol-gel derived PbTiO3 films. Materials Research Society Symposium - Proceedings. Vol. 346 Materials Research Society, 1994. pp. 291-296
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AB - Ferroelectric (FE) films, especially PZT films, have received increasing attention for microelectronics applications such as FE memory and in high density DRAM's. While rare earth doped PbTiO3 ceramics has been studied for SAW and piezoelectric applications, rare earth-doped films seldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths (such as, Nd, Sm, Tb, Dy, Er, Yb and La) have been prepared using acetates and alkoxides as precursors. The solutions were spin coated onto platinized Si wafers. The effects of the type and amount of rare incorporation on the phase assembly and microstructure have been quantified. The results of dielectric characterization (e.g., dielectric constant, dissipation factor and leakage currents) and FE behaviors (viz.remanent polarization, and coercive field) are presented; these films exhibited low leakage currents (3E-10 A/cm2) and much higher dielectric constant (up to 525) compared to undopeal PbTiO3 films.

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