Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers

J. K. White, J. G. McInerney, Jerome V Moloney

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Sharply peaked sidelobes limit power in the central lobe for both flared and unflared single-pass semiconductor laser amplifiers. A model recently developed by the authors have shown that sidelobes appear when the injected field pattern overfills the input aperture, suggesting that the phenomenon is a result of interaction of the field with the sharp edge of the carrier density profile in the lateral direction. In this paper, the effects of a transverse pattern propagating through an unsaturated amplifier are explored. It is shown that sidelobes are formed whose magnitude depends on the first and second derivatives of the transverse carrier density distribution. These sidelobes then seed the nonlinear growth of the sidelobes in the saturated case. Results of numerical simulations are given in which the amplifier current distribution have been smoothed about the edges. As predicted, the sidelobes are reduced.

Original languageEnglish (US)
Pages (from-to)593-595
Number of pages3
JournalOptics Letters
Volume20
Issue number6
StatePublished - Jan 1 1995

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sidelobes
amplifiers
apertures
semiconductor lasers
injection
profiles
current distribution
lobes
density distribution
seeds
simulation
interactions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers. / White, J. K.; McInerney, J. G.; Moloney, Jerome V.

In: Optics Letters, Vol. 20, No. 6, 01.01.1995, p. 593-595.

Research output: Contribution to journalArticle

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