Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers

J. K. White, J. G. McInerney, J. V. Moloney

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.

Original languageEnglish (US)
Pages (from-to)593-595
Number of pages3
JournalOptics letters
Volume20
Issue number6
DOIs
StatePublished - Mar 15 1995

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers'. Together they form a unique fingerprint.

  • Cite this