Electric field control of soliton motion and stacking in trilayer graphene

Matthew Yankowitz, Joel I Jan Wang, A. Glen Birdwell, Yu An Chen, K. Watanabe, T. Taniguchi, Philippe Jacquod, Pablo San-Jose, Pablo Jarillo-Herrero, Brian J Leroy

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition that is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) that exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free-energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favoured as the electric field increases. This ability to control the stacking order in graphene opens the way to new devices that combine structural and electrical properties.

Original languageEnglish (US)
Pages (from-to)786-789
Number of pages4
JournalNature Materials
Volume13
Issue number8
DOIs
StatePublished - 2014

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Graphite
Solitons
Graphene
graphene
solitary waves
Electric fields
electric fields
Carbon
configurations
Electronic properties
carbon
Crystal structure
crystal structure
flakes
electronics
Free energy
Structural properties
Electric properties
Phase transitions
free energy

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics
  • Materials Science(all)
  • Chemistry(all)

Cite this

Yankowitz, M., Wang, J. I. J., Birdwell, A. G., Chen, Y. A., Watanabe, K., Taniguchi, T., ... Leroy, B. J. (2014). Electric field control of soliton motion and stacking in trilayer graphene. Nature Materials, 13(8), 786-789. https://doi.org/10.1038/nmat3965

Electric field control of soliton motion and stacking in trilayer graphene. / Yankowitz, Matthew; Wang, Joel I Jan; Birdwell, A. Glen; Chen, Yu An; Watanabe, K.; Taniguchi, T.; Jacquod, Philippe; San-Jose, Pablo; Jarillo-Herrero, Pablo; Leroy, Brian J.

In: Nature Materials, Vol. 13, No. 8, 2014, p. 786-789.

Research output: Contribution to journalArticle

Yankowitz, M, Wang, JIJ, Birdwell, AG, Chen, YA, Watanabe, K, Taniguchi, T, Jacquod, P, San-Jose, P, Jarillo-Herrero, P & Leroy, BJ 2014, 'Electric field control of soliton motion and stacking in trilayer graphene', Nature Materials, vol. 13, no. 8, pp. 786-789. https://doi.org/10.1038/nmat3965
Yankowitz M, Wang JIJ, Birdwell AG, Chen YA, Watanabe K, Taniguchi T et al. Electric field control of soliton motion and stacking in trilayer graphene. Nature Materials. 2014;13(8):786-789. https://doi.org/10.1038/nmat3965
Yankowitz, Matthew ; Wang, Joel I Jan ; Birdwell, A. Glen ; Chen, Yu An ; Watanabe, K. ; Taniguchi, T. ; Jacquod, Philippe ; San-Jose, Pablo ; Jarillo-Herrero, Pablo ; Leroy, Brian J. / Electric field control of soliton motion and stacking in trilayer graphene. In: Nature Materials. 2014 ; Vol. 13, No. 8. pp. 786-789.
@article{ad8e643303c845d2b5c4cc56b82d8cbe,
title = "Electric field control of soliton motion and stacking in trilayer graphene",
abstract = "The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition that is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) that exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free-energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favoured as the electric field increases. This ability to control the stacking order in graphene opens the way to new devices that combine structural and electrical properties.",
author = "Matthew Yankowitz and Wang, {Joel I Jan} and Birdwell, {A. Glen} and Chen, {Yu An} and K. Watanabe and T. Taniguchi and Philippe Jacquod and Pablo San-Jose and Pablo Jarillo-Herrero and Leroy, {Brian J}",
year = "2014",
doi = "10.1038/nmat3965",
language = "English (US)",
volume = "13",
pages = "786--789",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",
number = "8",

}

TY - JOUR

T1 - Electric field control of soliton motion and stacking in trilayer graphene

AU - Yankowitz, Matthew

AU - Wang, Joel I Jan

AU - Birdwell, A. Glen

AU - Chen, Yu An

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Jacquod, Philippe

AU - San-Jose, Pablo

AU - Jarillo-Herrero, Pablo

AU - Leroy, Brian J

PY - 2014

Y1 - 2014

N2 - The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition that is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) that exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free-energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favoured as the electric field increases. This ability to control the stacking order in graphene opens the way to new devices that combine structural and electrical properties.

AB - The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition that is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) that exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free-energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favoured as the electric field increases. This ability to control the stacking order in graphene opens the way to new devices that combine structural and electrical properties.

UR - http://www.scopus.com/inward/record.url?scp=84904731333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904731333&partnerID=8YFLogxK

U2 - 10.1038/nmat3965

DO - 10.1038/nmat3965

M3 - Article

VL - 13

SP - 786

EP - 789

JO - Nature Materials

JF - Nature Materials

SN - 1476-1122

IS - 8

ER -