Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice

G. von Plessen, T. Meier, M. Koch, J. Feldmann, S. W. Koch, P. Thomas, E. O. Göbel, K. W. Goossen, J. M. Kuo, R. F. Kopf

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.

Original languageEnglish (US)
Pages (from-to)1759-1762
Number of pages4
JournalIl Nuovo Cimento D
Issue number11-12
StatePublished - Nov 1 1995


  • Conference proceedings
  • Excitons and related phenomena (including electron-hole drops)
  • Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
  • Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation)
  • Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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