Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice

G. von Plessen; T. Meier; M. Koch; J. Feldmann; S. W. Koch; P. Thomas; E. O. Göbel; K. W. Goossen; J. M. Kuo; R. F. Kopf

doi:10.1007/BF02457276

Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice

G. von Plessen, T. Meier, M. Koch, J. Feldmann, S. W. Koch, P. Thomas, E. O. Göbel, K. W. Goossen, J. M. Kuo, R. F. Kopf

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al_0.3 Ga_0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.

Original language	English (US)
Pages (from-to)	1759-1762
Number of pages	4
Journal	Il Nuovo Cimento D
Volume	17
Issue number	11-12
DOIs	https://doi.org/10.1007/BF02457276
State	Published - Nov 1 1995

Keywords

Conference proceedings
Excitons and related phenomena (including electron-hole drops)
Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation)
Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice",

abstract = "We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.",

keywords = "Conference proceedings, Excitons and related phenomena (including electron-hole drops), Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds), Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation), Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter",

author = "{von Plessen}, G. and T. Meier and M. Koch and J. Feldmann and Koch, {S. W.} and P. Thomas and G{\"o}bel, {E. O.} and Goossen, {K. W.} and Kuo, {J. M.} and Kopf, {R. F.}",

year = "1995",

month = nov,

day = "1",

doi = "10.1007/BF02457276",

language = "English (US)",

volume = "17",

pages = "1759--1762",

journal = "Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics",

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TY - JOUR

T1 - Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice

AU - von Plessen, G.

AU - Meier, T.

AU - Koch, M.

AU - Feldmann, J.

AU - Koch, S. W.

AU - Thomas, P.

AU - Göbel, E. O.

AU - Goossen, K. W.

AU - Kuo, J. M.

AU - Kopf, R. F.

PY - 1995/11/1

Y1 - 1995/11/1

N2 - We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.

AB - We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.

KW - Conference proceedings

KW - Excitons and related phenomena (including electron-hole drops)

KW - Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds)

KW - Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation)

KW - Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter

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U2 - 10.1007/BF02457276

DO - 10.1007/BF02457276

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EP - 1762

JO - Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

JF - Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

SN - 0392-6737

IS - 11-12

ER -

Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice

Abstract

Keywords

ASJC Scopus subject areas

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