Abstract
We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.
Original language | English (US) |
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Pages (from-to) | 1759-1762 |
Number of pages | 4 |
Journal | Il Nuovo Cimento D |
Volume | 17 |
Issue number | 11-12 |
DOIs | |
State | Published - Nov 1 1995 |
Keywords
- Conference proceedings
- Excitons and related phenomena (including electron-hole drops)
- Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
- Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation)
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
ASJC Scopus subject areas
- Physics and Astronomy(all)