Electrical properties of sol-gel derived La-doped PbTiO3-containing films

G. Teowee, J. M. Boulton, C. D. Baertlein, R. K. Wade, Donald R Uhlmann

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A series of sol-gel derived La-doped PbTiO3-containing films was prepared on platinized Si wafers. The compositions investigated include PLT (0-28 mole % La) and PLZT (e.g., 9/65/35 and 12/80/20) films. These films were fired at temperatures ranging from 500 to 750 °C. While most of the films were single-phase perovskite when fired at 700 °C, lower firing temperatures (approximately 500 °C) are sufficient to obtain crystalline PLT films, especially when the La content is more than 15 mole %. The paraelectric or ferroelectric character of the films as a function of La content is also addressed. In PLZT films, the Zr/Ti ratio affects the crystallization behavior and also the perovskite structure, i.e., either tetragonal or rhombohedral. Ferroelectric PLZT films exhibit high values of both dielectric constant (>700) and leakage current. The values of dielectric constant in the relaxor PLZT films are low, especially when compared to their bulk ceramic values (5000-10000). Paraelectric PLT films exhibit high values of dielectric constant (>500) and low leakage currents.

Original languageEnglish (US)
Pages (from-to)231-238
Number of pages8
JournalIntegrated Ferroelectrics
Volume4
Issue number3 pt 2
StatePublished - 1994

Fingerprint

Sol-gels
Electric properties
electrical properties
gels
Permittivity
Leakage currents
permittivity
Perovskite
leakage
Ferroelectric films
Crystallization
Ferroelectric materials
Crystalline materials
wafers
ceramics
crystallization
Temperature
temperature
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Teowee, G., Boulton, J. M., Baertlein, C. D., Wade, R. K., & Uhlmann, D. R. (1994). Electrical properties of sol-gel derived La-doped PbTiO3-containing films. Integrated Ferroelectrics, 4(3 pt 2), 231-238.

Electrical properties of sol-gel derived La-doped PbTiO3-containing films. / Teowee, G.; Boulton, J. M.; Baertlein, C. D.; Wade, R. K.; Uhlmann, Donald R.

In: Integrated Ferroelectrics, Vol. 4, No. 3 pt 2, 1994, p. 231-238.

Research output: Contribution to journalArticle

Teowee, G, Boulton, JM, Baertlein, CD, Wade, RK & Uhlmann, DR 1994, 'Electrical properties of sol-gel derived La-doped PbTiO3-containing films', Integrated Ferroelectrics, vol. 4, no. 3 pt 2, pp. 231-238.
Teowee, G. ; Boulton, J. M. ; Baertlein, C. D. ; Wade, R. K. ; Uhlmann, Donald R. / Electrical properties of sol-gel derived La-doped PbTiO3-containing films. In: Integrated Ferroelectrics. 1994 ; Vol. 4, No. 3 pt 2. pp. 231-238.
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