Electrically pumped circular-grating surface-emitting DBR laser on InGaAs strained single-quantum-well structure

Mahmoud Fallahi, F. Chatenoud, I. M. Templeton, M. Dion, C. M. Wu, A. Delage, R. Barber

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

The authors demonstrate the fabrication and room temperature operation of an electrically pumped circular-grating surface-emitting distributed-Bragg-reflector laser. An InGaAs/GaAs single quantum well (SQW) graded-index separate confinement heterostructure (GRINSCH) structure was grown by one-step molecular beam epitaxy (MBE). Circular gratings were defined by focused ion beam lithography. The lasing wavelength was 942 nm, and the threshold current was 280 mA. This is the first demonstration of these lasers with no epitaxial regrowth.

Original languageEnglish (US)
Pages (from-to)1087-1089
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number10
DOIs
Publication statusPublished - Oct 1992
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

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