Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells

Mark F. Krol, Michael J. Hayduk, Richard P. Leavitt, John T. Pham, Sergey Y. Ten, Brian P. McGinnis, Galina Khitrova, Nasser Peyghambarian

Research output: Contribution to journalConference article

Abstract

We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.

Original languageEnglish (US)
Pages (from-to)248-255
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2481
DOIs
StatePublished - Dec 1 1995
EventPhotonic Device Engineering for Dual-Use Applications - Orlando, FL, United States
Duration: Apr 17 1995Apr 17 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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