Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells

Mark F. Krol, Michael J. Hayduk, Richard P. Leavitt, John T. Pham, Sergey Y. Ten, Brian P. McGinnis, Galina Khitrova, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages248-255
Number of pages8
Volume2481
DOIs
Publication statusPublished - 1995
EventPhotonic Device Engineering for Dual-Use Applications - Orlando, FL, United States
Duration: Apr 17 1995Apr 17 1995

Other

OtherPhotonic Device Engineering for Dual-Use Applications
CountryUnited States
CityOrlando, FL
Period4/17/954/17/95

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ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Krol, M. F., Hayduk, M. J., Leavitt, R. P., Pham, J. T., Ten, S. Y., McGinnis, B. P., ... Peyghambarian, N. N. (1995). Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2481, pp. 248-255) https://doi.org/10.1117/12.212718