Electrochemical aspects of etching and passivation of silicon in alkaline solutions

Joong S. Jeon, Srini Raghavan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Electrochemical polarization experiments were performed on Si wafers in ammoniacal solutions maintained at a pH in the range of 9.5 to 11.5. Anodic polarization of silicon yielded curves which are typical for materials that undergo passivation. The values of open circuit potential and passivation potential for p-type Si wafers were more anodic than for the n-type Si wafers. Corrosion current density of p-type Si wafers of low resistivity was lower than that of wafers of high resistivity. Corrosion current densities correlated well with surface roughness induced in alkaline solutions. Addition of surfactant or H2O2 to alkaline solutions reduced critical current density for passivation and corrosion current density.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages63-68
Number of pages6
Volume386
Publication statusPublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/17/954/21/95

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jeon, J. S., & Raghavan, S. (1995). Electrochemical aspects of etching and passivation of silicon in alkaline solutions. In Materials Research Society Symposium - Proceedings (Vol. 386, pp. 63-68). Materials Research Society.