Electrochemical impedance spectroscopy of copper deposition on silicon from dilute hydrofluoric acid solutions

X. Cheng, G. Li, E. A. Kneer, B. Vermeire, H. G. Parks, Srini Raghavan, J. S. Jeon

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Electrochemical impedance spectroscopy was used to probe the mechanism of copper deposition on silicon from dilute hydrofluoric acid solutions. Reaction parameters such as polarization resistance and space-charge capacitance were evaluated using an equivalent circuit model. The electrochemical impedance technique was found to be sensitive to parts per billion levels of Cu2+ ion in dilute hydrofluoric acid solutions. An inductive loop appeared in Nyquist plots only when Cu2+ ions were present in hydrofluoric acid solutions. Both the polarization resistance and inductance decreased significantly as the solution Cu2+ concentration increased. Addition of a nonionic surfactant to hydrofluoric acid solutions significantly altered impedance characteristics of the silicon/solution interface. Total reflection X-ray fluorescence results showed that illumination enhanced deposition of copper on silicon nearly an order of magnitude.

Original languageEnglish (US)
Pages (from-to)352-357
Number of pages6
JournalJournal of the Electrochemical Society
Volume145
Issue number1
StatePublished - Jan 1998

Fingerprint

Hydrofluoric Acid
Hydrofluoric acid
hydrofluoric acid
Silicon
Electrochemical impedance spectroscopy
Copper
impedance
copper
silicon
spectroscopy
Ions
Polarization
Nonionic surfactants
polarization
Electric space charge
equivalent circuits
inductance
Equivalent circuits
Inductance
space charge

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Electrochemical impedance spectroscopy of copper deposition on silicon from dilute hydrofluoric acid solutions. / Cheng, X.; Li, G.; Kneer, E. A.; Vermeire, B.; Parks, H. G.; Raghavan, Srini; Jeon, J. S.

In: Journal of the Electrochemical Society, Vol. 145, No. 1, 01.1998, p. 352-357.

Research output: Contribution to journalArticle

Cheng, X. ; Li, G. ; Kneer, E. A. ; Vermeire, B. ; Parks, H. G. ; Raghavan, Srini ; Jeon, J. S. / Electrochemical impedance spectroscopy of copper deposition on silicon from dilute hydrofluoric acid solutions. In: Journal of the Electrochemical Society. 1998 ; Vol. 145, No. 1. pp. 352-357.
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