Electrochemical impedance spectroscopy of copper deposition on silicon from dilute hydrofluoric acid solutions

X. Cheng, G. Li, E. A. Kneer, B. Vermeire, H. G. Parks, S. Raghavan, J. S. Jeon

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

Electrochemical impedance spectroscopy was used to probe the mechanism of copper deposition on silicon from dilute hydrofluoric acid solutions. Reaction parameters such as polarization resistance and space-charge capacitance were evaluated using an equivalent circuit model. The electrochemical impedance technique was found to be sensitive to parts per billion levels of Cu2+ ion in dilute hydrofluoric acid solutions. An inductive loop appeared in Nyquist plots only when Cu2+ ions were present in hydrofluoric acid solutions. Both the polarization resistance and inductance decreased significantly as the solution Cu2+ concentration increased. Addition of a nonionic surfactant to hydrofluoric acid solutions significantly altered impedance characteristics of the silicon/solution interface. Total reflection X-ray fluorescence results showed that illumination enhanced deposition of copper on silicon nearly an order of magnitude.

Original languageEnglish (US)
Pages (from-to)352-357
Number of pages6
JournalJournal of the Electrochemical Society
Volume145
Issue number1
DOIs
StatePublished - Jan 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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