Removal of Ta films has been investigated in solutions containing 2,5 dihydroxy benzene sulfonic acid and potassium iodate (KIO3) under conditions that exist during electrochemical mechanical polishing. Specifically, the films were abraded at low pressures (∼0.5 psi) on a polyurethane pad under galvanostatic conditions. Variables such as pH, KIO3 concentration, and current density have been investigated to develop an optimized formulation. The nature of the oxide film formed on tantalum during the electrochemical abrasion process was investigated using x-ray photoelectron spectroscopy and nanoindentation techniques.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering