Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing

Emil A. Kneer, Chilkunda Raghunath, Srini Raghavan, Joong S. Jeon

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

The electrochemical behavior of chemically vapor deposited tungsten films in solutions of interest to tungsten chemical mechanical polishing has been investigated using dc potentiodynamic polarization, linear polarization, and Tafel methods. It was found that in the absence of an oxidizer, the tungsten surface was passivated most effectively at acidic pH values. At pH 2 or 4, a WO2/WO3 duplex oxide layer of less than 50 A thickness was detected over the tungsten layer by x-ray photoelectron spectroscopy. The oxide layer formed at pH 2 was much thicker, and had better passivity compared to the oxide formed at pH 4. Addition of H2O2 at pH 2 or 4 resulted in a dramatic increase in tungsten dissolution.

Original languageEnglish (US)
Pages (from-to)4095-4100
Number of pages6
JournalJournal of the Electrochemical Society
Volume143
Issue number12
DOIs
StatePublished - Dec 1996

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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