Electrokinetic characteristics of nitride wafers in aqueous solutions and their impact on particulate deposition

Der'E Jan, Srini Raghavan

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The electrokinetic characteristics of low pressure and plasma-enhanced chemical vapor deposited silicon nitride wafers subjected to different cleaning procedures were measured using a streaming potential technique. A streaming potential cell for handling 5 in. wafers was designed and fabricated to make these measurements. The isoelectric point (IEP) of silicon nitride was dependent on the cleaning method as well as the deposition technique. X-ray photoelectron spectroscopic measurement of Si/O and Si/N ratio of films was made to explain the difference in the measured IEP values. Polystyrene latex particle deposition from aqueous solutions onto silicon nitride wafers was investigated and correlated with the electrokinetic potential data.

Original languageEnglish (US)
Pages (from-to)2465-2469
Number of pages5
JournalJournal of the Electrochemical Society
Volume141
Issue number9
StatePublished - Sep 1994

Fingerprint

electrokinetics
Silicon nitride
silicon nitrides
Nitrides
particulates
nitrides
wafers
aqueous solutions
cleaning
Cleaning
Photoelectrons
latex
Latexes
Particles (particulate matter)
Polystyrenes
polystyrene
photoelectrons
low pressure
Vapors
vapors

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Electrokinetic characteristics of nitride wafers in aqueous solutions and their impact on particulate deposition. / Jan, Der'E; Raghavan, Srini.

In: Journal of the Electrochemical Society, Vol. 141, No. 9, 09.1994, p. 2465-2469.

Research output: Contribution to journalArticle

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