Electron beam induced changes in the refractive index and film thickness of amorphous AsxS100-x and AsxSe100-x films

Olli Nordman, Nina Nordman, Nasser N Peyghambarian

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

In this article, electron beam induced changes in the refractive index and film thickness of time relaxed amorphous AsxS100-x (with x = 30-45) and AsxSe100-x (with x = 40-70) are studied. The largest index change (∼0.08) in AsxS100-x films is found when x = 40. The corresponding value (∼0.06) for AsxSe100-x films is met when x = 55. The difference in the best compositions is attributed to the different relaxation processes of As-S and As-Se films. Electron beam irradiation causes surface shrinkage of the films. In AsxSe100-x films contactions are deepest (∼75 nm) when x = 55.

Original languageEnglish (US)
Pages (from-to)6055-6058
Number of pages4
JournalJournal of Applied Physics
Volume84
Issue number11
StatePublished - Dec 1 1998

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film thickness
electron beams
refractivity
shrinkage
irradiation
causes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Electron beam induced changes in the refractive index and film thickness of amorphous AsxS100-x and AsxSe100-x films. / Nordman, Olli; Nordman, Nina; Peyghambarian, Nasser N.

In: Journal of Applied Physics, Vol. 84, No. 11, 01.12.1998, p. 6055-6058.

Research output: Contribution to journalArticle

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