Highly anisotropic ECR etching of sub-half-micron features in GaAs and AlGaAs using a Cl2-CH4 mixture is reported. Etch depths greater than 1 μm with aspect ratios nearing 5:1 were achieved while maintaining vertical sidewalls, sharp transitions and smooth etched surface.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering