Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane

S. Penner, M. Fallahi, O. Nordman

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Highly anisotropic ECR etching of sub-half-micron features in GaAs and AlGaAs using a Cl2-CH4 mixture is reported. Etch depths greater than 1 μm with aspect ratios nearing 5:1 were achieved while maintaining vertical sidewalls, sharp transitions and smooth etched surface.

Original languageEnglish (US)
Pages (from-to)383-386
Number of pages4
JournalMicroelectronic Engineering
Volume41-42
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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