Electron holography of barrier structures in Co/ZrAlO x/Co magnetic tunnel junctions

Zhe Zhang, Tao Zhu, Feng Shen, Wen Ting Sheng, Weigang Wang, John Q. Xiao, Ze Zhang

Research output: Contribution to journalArticle

Abstract

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlO x/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlO x and ZrO x layers are mixed together, indicating that compact AlO x layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlO x/Co.

Original languageEnglish (US)
Pages (from-to)1732-1735
Number of pages4
JournalChinese Physics Letters
Volume22
Issue number7
DOIs
StatePublished - Jul 1 2005
Externally publishedYes

Fingerprint

tunnel junctions
holography
electrons
transmission electron microscopy
scanning electron microscopy
wedges
electrodes
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron holography of barrier structures in Co/ZrAlO x/Co magnetic tunnel junctions. / Zhang, Zhe; Zhu, Tao; Shen, Feng; Sheng, Wen Ting; Wang, Weigang; Xiao, John Q.; Zhang, Ze.

In: Chinese Physics Letters, Vol. 22, No. 7, 01.07.2005, p. 1732-1735.

Research output: Contribution to journalArticle

Zhang, Zhe ; Zhu, Tao ; Shen, Feng ; Sheng, Wen Ting ; Wang, Weigang ; Xiao, John Q. ; Zhang, Ze. / Electron holography of barrier structures in Co/ZrAlO x/Co magnetic tunnel junctions. In: Chinese Physics Letters. 2005 ; Vol. 22, No. 7. pp. 1732-1735.
@article{5f22a24a97b04964926dfd1c99b0ae98,
title = "Electron holography of barrier structures in Co/ZrAlO x/Co magnetic tunnel junctions",
abstract = "We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlO x/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlO x and ZrO x layers are mixed together, indicating that compact AlO x layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlO x/Co.",
author = "Zhe Zhang and Tao Zhu and Feng Shen and Sheng, {Wen Ting} and Weigang Wang and Xiao, {John Q.} and Ze Zhang",
year = "2005",
month = "7",
day = "1",
doi = "10.1088/0256-307X/22/7/047",
language = "English (US)",
volume = "22",
pages = "1732--1735",
journal = "Chinese Physics Letters",
issn = "0256-307X",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Electron holography of barrier structures in Co/ZrAlO x/Co magnetic tunnel junctions

AU - Zhang, Zhe

AU - Zhu, Tao

AU - Shen, Feng

AU - Sheng, Wen Ting

AU - Wang, Weigang

AU - Xiao, John Q.

AU - Zhang, Ze

PY - 2005/7/1

Y1 - 2005/7/1

N2 - We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlO x/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlO x and ZrO x layers are mixed together, indicating that compact AlO x layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlO x/Co.

AB - We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlO x/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlO x and ZrO x layers are mixed together, indicating that compact AlO x layer cannot be formed in such a bilayer structure of barriers. The EH results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlO x/Co.

UR - http://www.scopus.com/inward/record.url?scp=22044458580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22044458580&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/22/7/047

DO - 10.1088/0256-307X/22/7/047

M3 - Article

AN - SCOPUS:22044458580

VL - 22

SP - 1732

EP - 1735

JO - Chinese Physics Letters

JF - Chinese Physics Letters

SN - 0256-307X

IS - 7

ER -