Electronically controlled microwave band gap filter structures

Michael J. Hill, Richard W Ziolkowski, John Papapolymerou

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.

Original languageEnglish (US)
Pages (from-to)1008-1010
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
StatePublished - Feb 12 2001

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filters
microwaves
p-i-n diodes
defects
narrowband
diodes
crystal defects
crystal structure
single crystals
crystals
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electronically controlled microwave band gap filter structures. / Hill, Michael J.; Ziolkowski, Richard W; Papapolymerou, John.

In: Applied Physics Letters, Vol. 78, No. 7, 12.02.2001, p. 1008-1010.

Research output: Contribution to journalArticle

Hill, Michael J. ; Ziolkowski, Richard W ; Papapolymerou, John. / Electronically controlled microwave band gap filter structures. In: Applied Physics Letters. 2001 ; Vol. 78, No. 7. pp. 1008-1010.
@article{072cb5242af2462c8e2c138e6925dfa2,
title = "Electronically controlled microwave band gap filter structures",
abstract = "Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.",
author = "Hill, {Michael J.} and Ziolkowski, {Richard W} and John Papapolymerou",
year = "2001",
month = "2",
day = "12",
doi = "10.1063/1.1346629",
language = "English (US)",
volume = "78",
pages = "1008--1010",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Electronically controlled microwave band gap filter structures

AU - Hill, Michael J.

AU - Ziolkowski, Richard W

AU - Papapolymerou, John

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.

AB - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.

UR - http://www.scopus.com/inward/record.url?scp=0005277633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005277633&partnerID=8YFLogxK

U2 - 10.1063/1.1346629

DO - 10.1063/1.1346629

M3 - Article

VL - 78

SP - 1008

EP - 1010

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -