Energy Level Alignment of Molybdenum Oxide on Colloidal Lead Sulfide (PbS) Thin Films for Optoelectronic Devices

Diogenes Placencia, Paul Lee, Joseph G. Tischler, Erin L Ratcliff

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo5+ relative to Mo6+. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.

Original languageEnglish (US)
Pages (from-to)24981-24986
Number of pages6
JournalACS Applied Materials and Interfaces
Volume10
Issue number30
DOIs
StatePublished - Aug 1 2018

Fingerprint

Molybdenum oxide
Optoelectronic devices
Electron energy levels
Charge transfer
Lead
Thin films
Open circuit voltage
Surface chemistry
Leakage currents
Short circuit currents
Semiconductor quantum dots
Metals
Sulfides
lead sulfide
1,2-ethanedithiol

Keywords

  • interfaces
  • metal oxide
  • nanocrystals
  • optoelectronic devices
  • photoemission spectroscopy
  • solar cells

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Energy Level Alignment of Molybdenum Oxide on Colloidal Lead Sulfide (PbS) Thin Films for Optoelectronic Devices. / Placencia, Diogenes; Lee, Paul; Tischler, Joseph G.; Ratcliff, Erin L.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 30, 01.08.2018, p. 24981-24986.

Research output: Contribution to journalArticle

@article{6942496969cd4169ab169a6b16455dd0,
title = "Energy Level Alignment of Molybdenum Oxide on Colloidal Lead Sulfide (PbS) Thin Films for Optoelectronic Devices",
abstract = "Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo5+ relative to Mo6+. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.",
keywords = "interfaces, metal oxide, nanocrystals, optoelectronic devices, photoemission spectroscopy, solar cells",
author = "Diogenes Placencia and Paul Lee and Tischler, {Joseph G.} and Ratcliff, {Erin L}",
year = "2018",
month = "8",
day = "1",
doi = "10.1021/acsami.8b07651",
language = "English (US)",
volume = "10",
pages = "24981--24986",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "30",

}

TY - JOUR

T1 - Energy Level Alignment of Molybdenum Oxide on Colloidal Lead Sulfide (PbS) Thin Films for Optoelectronic Devices

AU - Placencia, Diogenes

AU - Lee, Paul

AU - Tischler, Joseph G.

AU - Ratcliff, Erin L

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo5+ relative to Mo6+. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.

AB - Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo5+ relative to Mo6+. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.

KW - interfaces

KW - metal oxide

KW - nanocrystals

KW - optoelectronic devices

KW - photoemission spectroscopy

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=85050076311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050076311&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b07651

DO - 10.1021/acsami.8b07651

M3 - Article

AN - SCOPUS:85050076311

VL - 10

SP - 24981

EP - 24986

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 30

ER -