Enhanced diffraction limited output power of tapered gain semiconductor lasers

A. J. Kent, A. Egan, J. G. McInerney, Jerome V Moloney

Research output: Contribution to journalArticle

Abstract

The spatiotemporal dynamics of linearly and trumpet flared high brightness semiconductor lasers are compared and contrasted using a comprehensive model built up from the microscopic physics. While both devices display complex multi longitudinal mode dynamics, the trumpet flared device is less susceptible to transverse filamentation instabilities and, hence, displays superior time-averaged far-field imaging properties.

Original languageEnglish (US)
Pages (from-to)509-514
Number of pages6
JournalOptics Express
Volume2
Issue number12
StatePublished - 1998

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semiconductor lasers
output
display devices
diffraction
far fields
brightness
physics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Enhanced diffraction limited output power of tapered gain semiconductor lasers. / Kent, A. J.; Egan, A.; McInerney, J. G.; Moloney, Jerome V.

In: Optics Express, Vol. 2, No. 12, 1998, p. 509-514.

Research output: Contribution to journalArticle

Kent, AJ, Egan, A, McInerney, JG & Moloney, JV 1998, 'Enhanced diffraction limited output power of tapered gain semiconductor lasers', Optics Express, vol. 2, no. 12, pp. 509-514.
Kent, A. J. ; Egan, A. ; McInerney, J. G. ; Moloney, Jerome V. / Enhanced diffraction limited output power of tapered gain semiconductor lasers. In: Optics Express. 1998 ; Vol. 2, No. 12. pp. 509-514.
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