Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts

N. Vieweg, M. Mikulics, M. Scheller, K. Ezdi, R. Wilk, H. W. Hübers, M. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We present a systematic study of annealed ohmic contacts and their effect on the performance of THz antennas. Annealing of the ohmic contact causes a strong decrease in the contact resistance and an enhancement of the electric field distribution inside the antenna structure. This doubles the output power of the devices compared to conventional photoconductors with standard Schottky-type metallization fabricated on an identical material.

Original languageEnglish (US)
Title of host publication33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
DOIs
StatePublished - Dec 31 2008
Event33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 - Pasadena, CA, United States
Duration: Sep 15 2008Sep 19 2008

Publication series

Name33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008

Other

Other33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
CountryUnited States
CityPasadena, CA
Period9/15/089/19/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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