Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts

N. Vieweg, M. Mikulics, Maik A Scheller, K. Ezdi, R. Wilk, H. W. Hübers, M. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We present a systematic study of annealed ohmic contacts and their effect on the performance of THz antennas. Annealing of the ohmic contact causes a strong decrease in the contact resistance and an enhancement of the electric field distribution inside the antenna structure. This doubles the output power of the devices compared to conventional photoconductors with standard Schottky-type metallization fabricated on an identical material.

Original languageEnglish (US)
Title of host publication33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 - Pasadena, CA, United States
Duration: Sep 15 2008Sep 19 2008

Other

Other33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
CountryUnited States
CityPasadena, CA
Period9/15/089/19/08

Fingerprint

Ohmic contacts
Antennas
Photoconducting materials
Contact resistance
Metallizing
Electric fields
Annealing
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Vieweg, N., Mikulics, M., Scheller, M. A., Ezdi, K., Wilk, R., Hübers, H. W., & Koch, M. (2008). Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts. In 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 [4665767] https://doi.org/10.1109/ICIMW.2008.4665767

Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts. / Vieweg, N.; Mikulics, M.; Scheller, Maik A; Ezdi, K.; Wilk, R.; Hübers, H. W.; Koch, M.

33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. 2008. 4665767.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vieweg, N, Mikulics, M, Scheller, MA, Ezdi, K, Wilk, R, Hübers, HW & Koch, M 2008, Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts. in 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008., 4665767, 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008, Pasadena, CA, United States, 9/15/08. https://doi.org/10.1109/ICIMW.2008.4665767
Vieweg N, Mikulics M, Scheller MA, Ezdi K, Wilk R, Hübers HW et al. Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts. In 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. 2008. 4665767 https://doi.org/10.1109/ICIMW.2008.4665767
Vieweg, N. ; Mikulics, M. ; Scheller, Maik A ; Ezdi, K. ; Wilk, R. ; Hübers, H. W. ; Koch, M. / Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts. 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. 2008.
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