Enhanced photoluminescence from GaAsSb quantum wells

Alan R. Kost, Xiaolan Sun, Nasser Peyghambarian, Nayer Eradat, Espen Selvig, Bjorn Ove Fimland, David H. Chow

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 μm (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors.

Original languageEnglish (US)
Pages (from-to)5631-5633
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number23
DOIs
StatePublished - Dec 6 2004

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kost, A. R., Sun, X., Peyghambarian, N., Eradat, N., Selvig, E., Fimland, B. O., & Chow, D. H. (2004). Enhanced photoluminescence from GaAsSb quantum wells. Applied Physics Letters, 85(23), 5631-5633. https://doi.org/10.1063/1.1759381