Enhancement of dynamic differential gain of GaAs etalons by angle tuning of the switch beam

R. Jin, D. Richardson, Stephan W Koch, H. M. Gibbs

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The dependence of differential gain in GaAs bistable etalons on the incident angle of the switching beam is studied theoretically for the case of pulsed, single-wavelength operation. Both dispersive and absorptive aspects of the etalon are included. Simulations predict that differential-gain characteristics can be improved over the normal incidence case by utilizing angular separation of the pump and switching beams. The limitations of the plane-wave approximation and the potential effect of beam walk-off are discussed.

Original languageEnglish (US)
Pages (from-to)344-347
Number of pages4
JournalOptical Engineering
Volume28
Issue number4
StatePublished - Apr 1989

Fingerprint

Etalons
beam switching
etalons
switches
Tuning
tuning
Switches
augmentation
plane waves
incidence
Pumps
pumps
Wavelength
approximation
wavelengths
simulation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Enhancement of dynamic differential gain of GaAs etalons by angle tuning of the switch beam. / Jin, R.; Richardson, D.; Koch, Stephan W; Gibbs, H. M.

In: Optical Engineering, Vol. 28, No. 4, 04.1989, p. 344-347.

Research output: Contribution to journalArticle

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