Enhancement of dynamic differential gain of GaAs etalons by angle tuning of the switch beam

R. Jin, D. Richardson, S. W. Koch, H. M. Gibbs

Research output: Contribution to journalArticle

4 Scopus citations


The dependence of differential gain in GaAs bistable etalons on the incident angle of the switching beam is studied theoretically for the case of pulsed, single-wavelength operation. Both dispersive and absorptive aspects of the etalon are included. Simulations predict that differential-gain characteristics can be improved over the normal incidence case by utilizing angular separation of the pump and switching beams. The limitations of the plane-wave approximation and the potential effect of beam walk-off are discussed.

Original languageEnglish (US)
Pages (from-to)344-347
Number of pages4
JournalOptical Engineering
Issue number4
StatePublished - Jan 1 1989


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering(all)

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