The dependence of differential gain in GaAs bistable etalons on the incident angle of the switching beam is studied theoretically for the case of pulsed, single-wavelength operation. Both dispersive and absorptive aspects of the etalon are included. Simulations predict that differential-gain characteristics can be improved over the normal incidence case by utilizing angular separation of the pump and switching beams. The limitations of the plane-wave approximation and the potential effect of beam walk-off are discussed.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics