Enhancement of the phonon-sideband luminescence in semiconductor microcavities

C. N. Böttge, M. Kira, Stephan W Koch

Research output: Contribution to journalArticle

Abstract

The influence of a semiconductor microcavity on the phonon-assisted photoluminescence is investigated by expanding the microscopic quantum-optical semiconductor luminescence equations. For the example of a ZnO-based system, strong enhancement but no normal-mode splitting of the phonon-sideband luminescence is predicted, even if the cavity becomes resonant with the first phonon sideband. For increasing cavity quality, it is shown that the intensity of the 1s resonance first increases due to the Purcell effect but then starts to decrease due to the transition into the nonperturbative regime, while the spectral integrated phonon-sideband intensity saturates.

Original languageEnglish (US)
Article number094301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number9
DOIs
StatePublished - Mar 5 2012
Externally publishedYes

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Microcavities
sidebands
Luminescence
luminescence
Semiconductor materials
Cavity resonators
augmentation
Photoluminescence
cavity resonators
photoluminescence
cavities

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Enhancement of the phonon-sideband luminescence in semiconductor microcavities. / Böttge, C. N.; Kira, M.; Koch, Stephan W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 85, No. 9, 094301, 05.03.2012.

Research output: Contribution to journalArticle

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