Enhancement of the phonon-sideband luminescence in semiconductor microcavities

The influence of a semiconductor microcavity on the phonon-assisted photoluminescence is investigated by expanding the microscopic quantum-optical semiconductor luminescence equations. For the example of a ZnO-based system, strong enhancement but no normal-mode splitting of the phonon-sideband luminescence is predicted, even if the cavity becomes resonant with the first phonon sideband. For increasing cavity quality, it is shown that the intensity of the 1s resonance first increases due to the Purcell effect but then starts to decrease due to the transition into the nonperturbative regime, while the spectral integrated phonon-sideband intensity saturates.