Abstract
The influence of a semiconductor microcavity on the phonon-assisted photoluminescence is investigated by expanding the microscopic quantum-optical semiconductor luminescence equations. For the example of a ZnO-based system, strong enhancement but no normal-mode splitting of the phonon-sideband luminescence is predicted, even if the cavity becomes resonant with the first phonon sideband. For increasing cavity quality, it is shown that the intensity of the 1s resonance first increases due to the Purcell effect but then starts to decrease due to the transition into the nonperturbative regime, while the spectral integrated phonon-sideband intensity saturates.
| Original language | English (US) |
|---|---|
| Article number | 094301 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 85 |
| Issue number | 9 |
| DOIs | |
| State | Published - Mar 5 2012 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Enhancement of the phonon-sideband luminescence in semiconductor microcavities. / Böttge, C. N.; Kira, M.; Koch, Stephan W.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 85, No. 9, 094301, 05.03.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhancement of the phonon-sideband luminescence in semiconductor microcavities
AU - Böttge, C. N.
AU - Kira, M.
AU - Koch, Stephan W
PY - 2012/3/5
Y1 - 2012/3/5
N2 - The influence of a semiconductor microcavity on the phonon-assisted photoluminescence is investigated by expanding the microscopic quantum-optical semiconductor luminescence equations. For the example of a ZnO-based system, strong enhancement but no normal-mode splitting of the phonon-sideband luminescence is predicted, even if the cavity becomes resonant with the first phonon sideband. For increasing cavity quality, it is shown that the intensity of the 1s resonance first increases due to the Purcell effect but then starts to decrease due to the transition into the nonperturbative regime, while the spectral integrated phonon-sideband intensity saturates.
AB - The influence of a semiconductor microcavity on the phonon-assisted photoluminescence is investigated by expanding the microscopic quantum-optical semiconductor luminescence equations. For the example of a ZnO-based system, strong enhancement but no normal-mode splitting of the phonon-sideband luminescence is predicted, even if the cavity becomes resonant with the first phonon sideband. For increasing cavity quality, it is shown that the intensity of the 1s resonance first increases due to the Purcell effect but then starts to decrease due to the transition into the nonperturbative regime, while the spectral integrated phonon-sideband intensity saturates.
UR - http://www.scopus.com/inward/record.url?scp=84858030386&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84858030386&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.85.094301
DO - 10.1103/PhysRevB.85.094301
M3 - Article
AN - SCOPUS:84858030386
VL - 85
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 9
M1 - 094301
ER -