Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

John Rönn, Lasse Karvonen, Alexander Pyymäki-Perros, Nasser N Peyghambarian, Harri Lipsanen, Antti Säynätjoki, Zhipei Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

Original languageEnglish (US)
Title of host publicationIntegrated Optics: Devices, Materials, and Technologies XX
PublisherSPIE
Volume9750
ISBN (Electronic)9781628419856
DOIs
StatePublished - 2016
EventIntegrated Optics: Devices, Materials, and Technologies XX - San Francisco, United States
Duration: Feb 15 2016Feb 17 2016

Other

OtherIntegrated Optics: Devices, Materials, and Technologies XX
CountryUnited States
CitySan Francisco
Period2/15/162/17/16

Keywords

  • atomic layer deposition
  • Erbium
  • integrated optics
  • optical amplifier
  • photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Rönn, J., Karvonen, L., Pyymäki-Perros, A., Peyghambarian, N. N., Lipsanen, H., Säynätjoki, A., & Sun, Z. (2016). Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. In Integrated Optics: Devices, Materials, and Technologies XX (Vol. 9750). [97500P] SPIE. https://doi.org/10.1117/12.2212990