We report the growth of epitaxial single-crystal (0001) hcp-Be on (111) Si substrates using molecular beam epitaxy. The Be is oriented with Be[101̄0]∥Si and Be[112̄0]∥Si. Crystalline quality improves with increasing deposition temperature T, where T=100, 200, 300, 400, and 500°C for the results reported here. The films deposited at T≤300°C are smooth while those deposited at T≥400°C are rough. A superstructure was observed on the surface, probably 3×3, R30°, for films grown at T=300°C. These epitaxial beryllium films are of much better quality than those we previously reported on α-Al2O 3.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)