Epitaxial growth and surface structure of (0001) Be on (111) Si

Judith A. Ruffner, J. M. Slaughter, James Eickmann, Charles M. Falco

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8 Scopus citations

Abstract

We report the growth of epitaxial single-crystal (0001) hcp-Be on (111) Si substrates using molecular beam epitaxy. The Be is oriented with Be[101̄0]∥Si[110] and Be[112̄0]∥Si[211]. Crystalline quality improves with increasing deposition temperature T, where T=100, 200, 300, 400, and 500°C for the results reported here. The films deposited at T≤300°C are smooth while those deposited at T≥400°C are rough. A superstructure was observed on the surface, probably 3×3, R30°, for films grown at T=300°C. These epitaxial beryllium films are of much better quality than those we previously reported on α-Al2O 3.

Original languageEnglish (US)
Pages (from-to)31-33
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number1
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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