Abstract
We report the growth of epitaxial single-crystal (0001) hcp-Be on (0001) α-Al2O3 substrates using molecular beam epitaxy. Thin films were characterized in situ with reflection high energy electron diffraction, and ex situ with ion beam analysis, electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. The in-plane orientation of films grown at substrate temperatures T in the range 10°C<T<270°C is Be[11̄00] ∥α-Al2O 3[12̄10] and Be[12̄10] ∥α-Al2O 3[11̄00], while at T=500°C the Be is aligned with the substrate. At T=10°C the films are smooth, but the roughness increases with increasing T. At T=500°C the crystal perfection improves dramatically but the Be forms large islands.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2995-2997 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 60 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1992 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Epitaxial growth of Be on α-Al2O3. / Ruffner, Judith A.; Slaughter, J. M.; Falco, Charles M.
In: Applied Physics Letters, Vol. 60, No. 24, 1992, p. 2995-2997.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Epitaxial growth of Be on α-Al2O3
AU - Ruffner, Judith A.
AU - Slaughter, J. M.
AU - Falco, Charles M
PY - 1992
Y1 - 1992
N2 - We report the growth of epitaxial single-crystal (0001) hcp-Be on (0001) α-Al2O3 substrates using molecular beam epitaxy. Thin films were characterized in situ with reflection high energy electron diffraction, and ex situ with ion beam analysis, electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. The in-plane orientation of films grown at substrate temperatures T in the range 10°C<T<270°C is Be[11̄00] ∥α-Al2O 3[12̄10] and Be[12̄10] ∥α-Al2O 3[11̄00], while at T=500°C the Be is aligned with the substrate. At T=10°C the films are smooth, but the roughness increases with increasing T. At T=500°C the crystal perfection improves dramatically but the Be forms large islands.
AB - We report the growth of epitaxial single-crystal (0001) hcp-Be on (0001) α-Al2O3 substrates using molecular beam epitaxy. Thin films were characterized in situ with reflection high energy electron diffraction, and ex situ with ion beam analysis, electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. The in-plane orientation of films grown at substrate temperatures T in the range 10°C<T<270°C is Be[11̄00] ∥α-Al2O 3[12̄10] and Be[12̄10] ∥α-Al2O 3[11̄00], while at T=500°C the Be is aligned with the substrate. At T=10°C the films are smooth, but the roughness increases with increasing T. At T=500°C the crystal perfection improves dramatically but the Be forms large islands.
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U2 - 10.1063/1.106787
DO - 10.1063/1.106787
M3 - Article
AN - SCOPUS:36449007203
VL - 60
SP - 2995
EP - 2997
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
ER -