Epitaxial growth of Be on α-Al2O3

Judith A. Ruffner, J. M. Slaughter, Charles M. Falco

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We report the growth of epitaxial single-crystal (0001) hcp-Be on (0001) α-Al2O3 substrates using molecular beam epitaxy. Thin films were characterized in situ with reflection high energy electron diffraction, and ex situ with ion beam analysis, electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. The in-plane orientation of films grown at substrate temperatures T in the range 10°C<T<270°C is Be[11̄00] ∥α-Al2O 3[12̄10] and Be[12̄10] ∥α-Al2O 3[11̄00], while at T=500°C the Be is aligned with the substrate. At T=10°C the films are smooth, but the roughness increases with increasing T. At T=500°C the crystal perfection improves dramatically but the Be forms large islands.

Original languageEnglish (US)
Pages (from-to)2995-2997
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number24
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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